国产精品资源站,成人激情在线,九九精品成人免费国产片,日韩欧美国产视频,亚洲性一区,久久精品高清,2019国产精品

Your Position: Home > Support > Service Center

Microsoft joined a new generation of DRAM groups of HMCC reason

2012/8/16??????view:

  In May 8, 2012, promote the use of TSV ( TSV ) 3D laminated to a new generation of DRAM " Hybrid Memory Cube ( HMC ) Hybrid Memory Cube Consortium " popularity ( HMCC ) announced that the United States, software giant Microsoft has joined the association.

  HMC is the three-dimensional structure, the logic chip along the vertical direction superposition of multiple DRAM chips, and then through the TSV connection wiring technology. HMC 's biggest characteristic is compared with existing DRAM, performance can be greatly improved. The reasons there are two, one is between chips from semiconductor package wiring distance on a board on the traditional methods of " cm " units are substantially reduced to dozens ofμ m~ 1mm; two is on a chip to form 1000 to tens of thousands of TSV, realize the multipoint connection chip.

  Microsoft 's accession to the HMCC, because we are considering how to corresponding is likely to become a personal computer and a computer to improving the performance of " memory bottleneck " problem. Memory bottleneck refers to as the microprocessor performance through multiple nucleation and constantly improve, the architecture of the DRAM performance will not be able to meet the need of processor. If do not solve this problem, can occur even if the computer new product, the actual performance is also not appropriate promotion situation. Compared with it, if the TSV based on the application of HMC in computer main memory, the data transmission speed can be increased to the current DRAM is about 15 times, therefore, is not just a giant Microsoft, American companies such as Intel are also active in research using HMC.

  In fact, plans to use TSV not only for HMC and other DRAM products. According to the semiconductor manufacturers plan, in the next few years, borne from electronic equipment input function of the CMOS sensor to the responsible for the operations of FPGA and multi core processor, and in charge of product storage of DRAM and NAND flash will have to import TSV. If the plan goes ahead, TSV will assume the input, operation, storage and other electronic equipment main function.

佛学| 永善县| 五华县| 枣强县| 桂阳县| 中宁县| 怀来县| 凯里市| 柳河县| 双城市| 福贡县| 芜湖县| 乌海市| 马边| 汉川市| 湖北省| SHOW| 蓬莱市| 湟中县| 基隆市| 聂荣县| 内丘县| 阜平县| 丹巴县| 平南县| 稷山县| 南乐县| 安泽县| 东兰县| 百色市| 定陶县| 麟游县| 洪雅县| 永春县| 平塘县| 乐至县| 漠河县| 岑巩县| 无棣县| 金沙县| 凤城市|